ANNEALING CHARACTERISTICS OF SI-RICH SIO2-FILMS

被引：196

作者：

NESBIT, LA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.95842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：38 / 40

页数：3

共 17 条

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