Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN

被引：28

作者：

Kasu, M ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 13期

关键词：

D O I：

10.1063/1.1357449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sharp ridge structures with a 3 nm wide (0001) top facet and {1 (1) over bar 01} sidewall facets formed on the surface of a heavily Si-doped AlN layer on a 6H-SiC (0001) substrate during metalorganicvapor-phase-epitaxy growth. This is caused by {1 (1) over bar 01} facet growth induced by heavy Si doping. We obtained a large field emission (FE) current density of 11 mA/cm(2) at 84 V/mum. One of the reasons for the large FE is that the ridge-structure formation decreases the energy barrier necessary for FE by about 2.4 eV. (C) 2001 American Institute of Physics.

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页码：1835 / 1837

页数：3

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