Control of carrier density by a solution method in carbon-nanotube devices

被引：81

作者：

Takenobu, T

Kanbara, T

Akima, N

Takahashi, T

Shiraishi, M

Tsukagoshi, K

Kataura, H

Aoyagi, Y

Iwasa, Y

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3300012, Japan

[3] RIKEN, Wako, Saitama 3510198, Japan

[4] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 3320012, Japan

[5] Japan Sci & Technol Corp, PRESTO, Kawaguchi 3300012, Japan

[6] AIST, NRI, Tsukuba, Ibaraki 3058562, Japan

[7] Tokyo Inst Technol, Yokohama, Kanagawa 3368502, Japan

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 20期

关键词：

D O I：

10.1002/adma.200500759

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new method for controlling the hole density in single-walled carbon nanotube field-effect transistors (SWCNT-FETs) by solution-based chemical doping is presented. The use of organic molecules that adsorb onto SWCNTs from solution is investigated. The transfer characteristics of the SWCNT-FETs exhibit continuous and precise shifts in threshold voltages (see Figure) upon doping with F(4)TCNQ molecules, even in air.

引用

页码：2430 / +

页数：6

共 27 条

[1]

[Anonymous], 1988, PHYS SURFACES

[2] Chemical optimization of self-assembled carbon nanotube transistors [J].