Transparent conductive Tb-doped ZnO films prepared by rf reactive magnetron sputtering

被引：50

作者：

Fang, ZB

Tan, YS

Gong, HX

Zhen, CM

He, ZW

Wang, YY ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

[3] Hebei Normal Univ, Inst Phys, Shijiazhuang 050016, Peoples R China

来源：

MATERIALS LETTERS | 2005年 / 59卷 / 21期

基金：

中国国家自然科学基金;

关键词：

Tb-doped ZnO films; semiconductors; RF reactive sputtering; transparent conducting oxide;

D O I：

10.1016/j.matlet.2005.02.062

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Terbium-doped Zinc oxide (ZnO:Tb) films were prepared by rf reactive magnetron sputtering using a Zn target with some Tb-chips attached. The structural, electrical, and optical properties of the films were investigated by X-ray diffraction (XRD), Hall measurement and optical spectroscopy, respectively. The resistivity of 9.34 x 10(-4) Omega cm was obtained in ZnO: Tb films prepared on a Si substrate at a temperature of 250 degrees C with a Tb content of 4.1%. The transparent edges of the films showed blue-shifts with the average transmittance within the visible range being up to 85%. The results to date demonstrate that Tb-doped ZnO films are high-quality transparent conductive oxide materials. (c) 2005 Elsevier B.V. All rights reserved.

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收藏

页码：2611 / 2614

页数：4

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