Room temperature adsorption of aniline (C6H5NH2) on Si(100)(2x1) observed with scanning tunneling microscopy

被引：39

作者：

Rummel, RM ^{[1
]}

Ziegler, C ^{[1
]}

机构：

[1] Univ Tubingen, Inst Phys & Theoret Chem, D-72076 Tubingen, Germany

来源：

SURFACE SCIENCE | 1998年 / 418卷 / 01期

关键词：

silicon; aniline; chemisorption; organic compound; scanning tunneling microscopy; scanning tunneling spectroscopy;

D O I：

10.1016/S0039-6028(98)00726-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemisorption of aniline (C6H5NH2) on Si(100)(2 x 1) at room temperature has been studied for the first time with scanning tunneling microscopy (STM) and spectroscopy (STS). The STM images reveal that aniline adsorbs on Si(100)(2 x 1) and forms regions of moderately ordered p(2 x 2) or c(4 x 2) structures. The STS results show a quenching of the silicon surface states after adsorption and an increased energetic gap between occupied and unoccupied surface slates if compared with the clean surface. The first occupied state coincides with the corresponding peak in the ultraviolet photoelectron spectrum. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：303 / 313

页数：11

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