Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

被引：70

作者：

Liu, JP ^{[1
]}

Zaumseil, P ^{[1
]}

Bugiel, E ^{[1
]}

Osten, HJ ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 05期

关键词：

D O I：

10.1063/1.1389509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the epitaxial growth of hexagonal Pr2O3(001) on Si(111), with x-ray omega -scan full width at half maximum values as low as 0.06 degrees, which is comparable with Si substrates. We find that a phase transition takes place during the anneal of the as-grown films in N-2 below the growth temperature. The annealed films display a cubic structure isomorphic to manganese oxide, (111) oriented but 180 degrees rotated about the Si(111) surface normal. The phase transition can be due to nitrogen incorporation. (C) 2001 American Institute of Physics.

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页码：671 / 673

页数：3

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