PULSED-LASER DEPOSITION OF EPITAXIAL SILICON/H-PR2O3/SILICON HETEROSTRUCTURES

被引：44

作者：

TARSA, EJ ^{[1
]}

SPECK, JS ^{[1
]}

ROBINSON, M ^{[1
]}

机构：

[1] LAWRENCE SEMICOND RES LABS INC,TEMPE,AZ 85282

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.109998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Si/praseodymium oxide/Si heterostructures were grown in situ on (111) oriented Si substrates using pulsed laser deposition. Growth of the oxide layer under oxygen deficient conditions resulted in hexagonal Pr2O3 (h-Pr2O3) films which displayed a (001)Pr2O3\\ (111)Si, [110]Pr2O3\\ [110BAR]Si orientation and x-ray rocking curve full width at half-maximum values of -0.8-degrees. The top Si layer grew epitaxially on the oxide film with a twinned (111)Si\\ (001)Pr2O3 orientation. The surface structure of both oxide and semiconductor layers was investigated in situ using reflection high energy electron diffraction, and the resulting films were characterized using x-ray diffraction and transmission electron microscopy.

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页码：539 / 541

页数：3

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