BIPOLAR-TRANSISTORS ON SI/MGO.AL2O3/SI

SOI-bipolar transistors were fabricated by Si epitaxial layers on MgO . Al2O3 epitaxial layers grown on Si wafers. Leakage current increased due to crystalline defects on the Si layer. By using solid-phase epitaxy (SPE) or seedless zone melting recrystallization (ZMR), crystalline defects were reduced. Stacking faults were reduced from 10(8)/cm2 to less than 10(2)/cm2 by solid-phase epitaxial growth of the amorphous Si layer. The leakage current of a bipolar transistor fabricated on a defect-reduced Si layer was less than 1 nA at 10 V. Both stacking faults and dislocations were reduced by ZMR of the Si layer epitaxially grown on MgO . Al2O3/Si. Dielectrically isolated bipolar transistors with low-leakage current were obtained.