Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction

被引：10

作者：

Paschke, K ^{[1
]}

Geue, T ^{[1
]}

Barberka, TA ^{[1
]}

Bolm, A ^{[1
]}

Pietsch, U ^{[1
]}

Rosch, M ^{[1
]}

Batke, E ^{[1
]}

Faller, F ^{[1
]}

Kerkel, K ^{[1
]}

Oshinowo, J ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] UNIV WURZBURG,D-97074 WURZBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.118473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Free-standing wire arrays prepared by holographic exposure and wet chemical deep etching on a vertically arranged GaAs/GaInAs/GaAs[001] single quantum well structure were characterized by x-ray grazing incidence diffraction using synchrotron radiation. Using a grazing angle of alpha(i) approximate to 0.05 degrees the diffracted intensity stems primarily from the surface grating. It's periodicity (D approximate to 480 nm) was determined close to the (-220) and (220) Bragg reflection being parallel and perpendicular to the orientation of wires, respectively. The average wire width [(21.6 +/- 1.5) nm and (96.6 +/- 1.5) nm, respectively] and the coherence length of the grating (xi approximate to 2 mu m) were obtained via Fourier transformation of the (220) shape function. (C) 1997 American Institute of Physics.

引用

页码：1031 / 1033

页数：3

共 17 条

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