Time-dependent diffusivity of boron in silicon oxide and oxynitride

被引：23

作者：

Ellis, KA ^{[1
]}

Buhrman, RA ^{[1
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.123425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusivities of boron in silicon oxide and oxynitride have been determined from secondary ion mass spectroscopy measurements of annealed metal-oxide-silicon structures. The results clearly show a decrease in diffusivity with increasing anneal time which is approximately exponential in form. This effect implies a similar time dependence in the concentration of a secondary species, such as hydrogen, or a defect within the dielectric, which promotes diffusion even in a nominally pure oxide. (C) 1999 American Institute of Physics. [S0003-6951(99)03207-6].

引用

页码：967 / 969

页数：3

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