Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

被引：116

作者：

Zhong, ZY ^{[1
]}

Halilovic, A ^{[1
]}

Fromherz, T ^{[1
]}

Schäffler, F ^{[1
]}

Bauer, G ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期

关键词：

D O I：

10.1063/1.1581986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional (2D) periodic arrays of Ge islands were realized on prepatterned Si (001) substrates by solid-source molecular-beam epitaxy. Atomic-force microscopy images demonstrate that the Ge islands are formed in the 2D laterally ordered pits of patterned substrates. The 2D periodicity of the substrate pattern is replicated throughout a stack of Ge island layers by strain-driven vertical ordering. Photoluminescence spectra of the ordered Ge islands show well-resolved peaks of the no-phonon signal and the transverse-optical phonon replica. These peaks are observed at nearly the same energy as those of random Ge islands deposited under the same conditions on unpatterned Si substrates. (C) 2003 American Institute of Physics.

引用

页码：4779 / 4781

页数：3

共 14 条

[1] Site control of InAs quantum dots on GaAs surfaces patterned by in situ electron-beam lithography [J].

Ishikawa, T ;

Kohmoto, S ;

Nishikawa, S ;

Nishimura, T ;

Asakawa, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :2635-2639

[2] Regimented placement of self-assembled Ge dots on selectively grown Si mesas [J].

Jin, G ;

Liu, JL ;

Wang, KL .

APPLIED PHYSICS LETTERS, 2000, 76 (24) :3591-3593

[3] Lithographic positioning of self-assembled Ge islands on Si(001) [J].

Kamins, TI ;

Williams, RS .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1201-1203

[4] Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties [J].

Kim, ES ;

Usami, N ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1617-1619

[5] Transient-enhanced Si diffusion on native-oxide-covered Si(001) nanostructures during vacuum annealing [J].

Lichtenberger, H ;

Mühlberger, M ;

Schäffler, F .

APPLIED PHYSICS LETTERS, 2003, 82 (21) :3650-3652

[6] SURFACE MIGRATION INDUCED SELF-ALIGNED INAS ISLANDS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MUI, DSL ;

LEONARD, D ;

COLDREN, LA ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1995, 66 (13) :1620-1622

[7] Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface [J].

Schmidt, OG ;

Jin-Phillipp, NY ;

Lange, C ;

Denker, U ;

Eberl, K ;

Schreiner, R ;

Gräbeldinger, H ;

Schweizer, H .

APPLIED PHYSICS LETTERS, 2000, 77 (25) :4139-4141

[8] Effect of overgrowth temperature on the photoluminescence of Ge/Si islands [J].

Schmidt, OG ;

Denker, U ;

Eberl, K ;

Kienzle, O ;

Ernst, F .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2509-2511

[9] Modified Stranski-Krastanov growth in stacked layers of self-assembled islands [J].

Schmidt, OG ;

Kienzle, O ;

Hao, Y ;

Eberl, K ;

Ernst, F .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1272-1274

[10] Luminescence of laterally ordered Ge islands along ⟨100⟩ directions [J].

Vescan, L ;

Stoica, T .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :10119-10126

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