Modelling multivalent defects in thin film solar cells

被引：177

作者：

Decock, Koen ^{[1
]}

Khelifi, Samira ^{[1
]}

Burgelman, Marc ^{[1
]}

机构：

[1] Univ Ghent, Dept Elect & Informat Syst ELIS, B-9000 Ghent, Belgium

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

关键词：

Solar cells; Defects in semiconductors; Computer simulation; STATISTICS; SEMICONDUCTORS;

D O I：

10.1016/j.tsf.2010.12.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multivalent defects, e.g. double donors/acceptors or amphoteric defects, are important in materials used in solar cell production in general and in chalcopyrite materials in particular. We extended our thin film solar cell simulation software SCAPS to enable the simulation of multivalent defects with up to five different charge states; the algorithms presented are however able to simulate an arbitrary number of possible charge states. The presented solution method avoids numerical inaccuracies caused by the subtraction of two almost equal numbers. This new modelling facility is afterwards used to investigate the consequences of the multivalent character of defects for the simulation of chalcopyrite based solar cells. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7481 / 7484

页数：4

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