Self-assembled InAs quantum-dot chains on self-formed GaAs mesa-stripes by molecular beam epitaxy

被引：6

作者：

Kanto, T ^{[1
]}

Yamaguchi, K ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828285, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

InAs; quantum-dot chain; molecular beam epitaxy; strain control; misfit dislocation; mesa stripe; InGaAs; GaAs;

D O I：

10.1143/JJAP.44.7690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-formation of InAs quantum-dot chains (QDCs) was demonstrated on GaAs/InGaAs/GaAs(001) layers by molecular beam epitaxy (MBE). In the MBE growth of a GaAs layer on a corrugated InGaAs/GaAs buffer layer, mesa-stripe structures with the {211}A side wall were spontaneously formed along the [1101 direction. InAs QDCs were formed on the GaAs mesa stripes along the [110] direction. In particular, uniform InAs QDCs were fabricated on the vicinal GaAs(001) substrate, misoriented toward the [110] direction. The self-formation of QDCs was attributed to the misfit dislocation and step structure.

引用

页码：7690 / 7693

页数：4

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