One-dimensional single (In,Ga)As quantum dot arrays formed by self-organized anisotropic strain engineering

被引：3

作者：

Mano, T ^{[1
]}

Nötzel, R ^{[1
]}

Hamhuis, GJ ^{[1
]}

Eijkemans, TJ ^{[1
]}

Wolter, JH ^{[1
]}

机构：

[1] Eindhoven Univ Technol, EITT, COBRA, Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

InGaAs; quantum dot; ordering; molecular beam epitaxy;

D O I：

10.1016/j.physe.2003.11.069

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed on planar singular GaAs (10 0) in molecular beam epitaxy by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template. The distinct stages of template formation, which govern the uniformity of the QD arrays, are directly imaged by atomic force microscopy (AFM). The AFM results reveal that excess strain accumulation causes fluctuations of the QWR template and the QD arrays. By reducing the amount of (In,Ga)As and increasing the GaAs separation layer thickness in each SL period, the uniformity of the QD arrays dramatically improves. The single QD arrays are straight over more than I pm and extended to 10 pm length. Capped QD arrays show clear photoluminescence emission up to room temperature. (C) 2003 Elsevier B.V. All rights reserved.

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页码：568 / 572

页数：5

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