Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(100) during superlattice formation

被引：10

作者：

Mano, T ^{[1
]}

Nötzel, R ^{[1
]}

Hamhuis, GJ ^{[1
]}

Eijkemans, TJ ^{[1
]}

Wolter, JH ^{[1
]}

机构：

[1] Eindhoven Univ Technol, eiTT COBRA Int Univ, Res Inst, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

surface process; molecular beam epitaxy; semiconductor III-V materials;

D O I：

10.1016/S0022-0248(02)02378-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate the role of In desorption for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) based on elongated island formation, annealing, and stacking in (In,Ga)As/GaAs superlattice growth. We observe well-defined QWR formation only in the presence of thin GaAs capping of the elongated islands before annealing. Without thin GaAs capping, the In composition becomes too low for controlling the nucleation of (In,Ga)As islands in subsequent layers, necessary for QWR formation. Hence, thin GaAs capping is crucial to reproducibly balance In desorption for formation and vertical correlation of well-defined QWRs, serving as unique template for one-dimensional quantum dot ordering. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：264 / 268

页数：5

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