Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

被引：114

作者：

Wang, ZM ^{[1
]}

Holmes, K ^{[1
]}

Mazur, YI ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 11期

关键词：

D O I：

10.1063/1.1669064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 mum are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices. (C) 2004 American Institute of Physics.

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页码：1931 / 1933

页数：3

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