Intrinsic doping: A new approach for n-type modulation doping in InP-based heterostructures

被引：23

作者：

Chen, WM ^{[1
]}

Buyanova, IA ^{[1
]}

Buyanov, AV ^{[1
]}

Lundstrom, T ^{[1
]}

Bi, WG ^{[1
]}

Tu, CW ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.77.2734

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new approach for n-type modulation doping in InP-based heterostructures is proposed where intrinsic defects are utilized to provide charge carriers without an external shallow impurity doping source. The success of this approach is demonstrated by results from InGaAs/InP heterostructures, where doping is provided by P-In antisites, preferably introduced during off-stoichiometric growth of InP. The efficiency of electron transfer and quantum mobility of a two-dimensional electron gas formed near the heterointerface is shown to be much higher as compared to traditional extrinsic doping.

引用

页码：2734 / 2737

页数：4

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