InGaN green light emitting diodes with deposited nanoparticles

被引：21

作者：

Butun, Bayrarn ^{[1
]}

Cesario, Jean

Enoch, Stefan

Quidant, Romain

Ozbay, Ekmel

机构：

[1] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[2] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

[3] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

[4] ICFO Inst Ciencies Foton, Castelldefels 08860, Barcelona, Spain

[5] Univ Paul Cezanne Aix Marseille III, CNRS, UMR 6133, Inst Fresnel, F-13397 Marseille, France

来源：

PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS | 2007年 / 5卷 / 2-3期

关键词：

GaN; InGaN; MOCVD; light-emitting diode (LED); nanoparticle; surface plasmon; silver; Fourier modal method; plasmon;

D O I：

10.1016/j.photonics.2007.07.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement. (C) 2007 Published by Elsevier B.V.

引用

页码：86 / 90

页数：5

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