Light-dependent I-V characteristics of TiO2/CdTe heterojunction solar cells

被引：31

作者：

Brus, V. V. ^{[1
]}

Ilashchuk, M. I. ^{[2
]}

Kovalyuk, Z. D. ^{[1
]}

Maryanchuk, P. D. ^{[2
]}

机构：

[1] NAS Ukraine, Chernivtsi Branch, Frantsevich Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine

[2] Yuriy Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 05期

关键词：

ZNO/CDTE HETEROJUNCTIONS; ELECTRICAL-PROPERTIES; QUANTUM EFFICIENCY; INTERFACE STATES; CHARGE-TRANSPORT; ABSORBER;

D O I：

10.1088/0268-1242/27/5/055008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach was proposed for the analysis of light current-voltage (I-V) characteristics of nonideal heterjunctions in the case of the dominating current transport mechanisms induced by multistep tunnel-recombination processes via interface states. I-V characteristics of the anisotype abrupt heterojunction n-TiO2/p-CdTe were investigated under different light conditions. The values of the series R-s and shunt R-sh resistance, as well as those of the coefficients alpha and B, which quantitatively describe the dominating tunnel-recombination current transport mechanism, were established to be strongly dependent on light conditions.

引用

页数：4

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