共 45 条
[11]
On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's
[J].
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST,
2004,
:109-112
[12]
ENERGY SCALES FOR NOISE PROCESSES IN METALS
[J].
PHYSICAL REVIEW LETTERS,
1979, 43 (09)
:646-649
[13]
FERNANDEZ R, 2006, IEDM, P1
[14]
HYSTERESIS AND FRANCK-CONDON RELAXATION IN INSULATOR-SEMICONDUCTOR TUNNELING
[J].
PHYSICAL REVIEW B,
1990, 41 (12)
:8313-8317
[15]
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
[J].
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,
2007,
:801-+
[16]
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability
[J].
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,
2010,
:16-25
[17]
Grasser T, 2009, INT EL DEVICES MEET, P681
[18]
Grasser T., 2009, IEEE Int. Reliab. Phys. Symp, P33
[19]
The universality of NBTI relaxation and its implications for modeling and characterization
[J].
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL,
2007,
:268-+
[20]
NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
[J].
PHYSICAL REVIEW B,
1977, 15 (02)
:989-1016