Recent Advances in Understanding the Bias Temperature Instability

被引:99
作者
Grasser, T. [1 ]
Kaczer, B. [3 ]
Goes, W. [1 ]
Reisinger, H. [4 ]
Aichinger, Th. [5 ]
Hehenberger, Ph. [2 ]
Wagner, P. -J. [1 ]
Schanovsky, F. [2 ]
Franco, J. [3 ]
Roussel, Ph. [3 ]
Nelhiebel, M. [4 ]
机构
[1] TU Wien, Christian Doppler Lab TCAD, Vienna, Austria
[2] TU Wien, Inst Microelect, Vienna, Austria
[3] IMEC, Leuven, Belgium
[4] Infineon, Munich, Germany
[5] KAI, Vallach, Austria
来源
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年
关键词
NBTI DEGRADATION; NOISE; RELAXATION; RECOMBINATION; KINETICS; MODEL; GAAS;
D O I
10.1109/IEDM.2010.5703295
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Our understanding of the bias temperature instability (BTI) has been plagued by disagreements related to measurement issues. Although even in the early papers on BTI the existence of recovery was acknowledged and discussed [1, 2], for unknown reasons this had little impact on the way we used to think about the phenomenon until recently [3-7]. Even after the re-discovery of recovery [3], it took a few years until it was fully appreciated that any measurement scheme conceived so far considerably interferes with the degradation it is supposed to measure, often accelerating its recovery. Nonetheless, this experimental nuisance has led researchers to think in more detail about the problem and has thus opened the floodgates for fresh ideas [6-11]. Some of these ideas together with the experimental data supporting them are reviewed in the following.
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相关论文
共 45 条
[11]   On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's [J].
Denais, M ;
Bravaix, A ;
Huard, V ;
Parthasarathy, C ;
Ribes, G ;
Perrier, F ;
Rey-Tauriac, Y ;
Revil, N .
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :109-112
[12]   ENERGY SCALES FOR NOISE PROCESSES IN METALS [J].
DUTTA, P ;
DIMON, P ;
HORN, PM .
PHYSICAL REVIEW LETTERS, 1979, 43 (09) :646-649
[13]  
FERNANDEZ R, 2006, IEDM, P1
[14]   HYSTERESIS AND FRANCK-CONDON RELAXATION IN INSULATOR-SEMICONDUCTOR TUNNELING [J].
FOWLER, WB ;
RUDRA, JK ;
ZVANUT, ME ;
FEIGL, FJ .
PHYSICAL REVIEW B, 1990, 41 (12) :8313-8317
[15]   Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability [J].
Grasser, T. ;
Kaczer, B. ;
Hehenberger, R. ;
Goes, W. ;
O'Connor, R. ;
Reisinger, H. ;
Gustin, W. ;
Schluender, C. .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :801-+
[16]   The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability [J].
Grasser, T. ;
Reisinger, H. ;
Wagner, P. -J. ;
Schanovsky, F. ;
Goes, W. ;
Kaczer, B. .
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, :16-25
[17]  
Grasser T, 2009, INT EL DEVICES MEET, P681
[18]  
Grasser T., 2009, IEEE Int. Reliab. Phys. Symp, P33
[19]   The universality of NBTI relaxation and its implications for modeling and characterization [J].
Grasser, Tibor ;
Goes, Wolfgang ;
Sverdlov, Victor ;
Kaczer, Ben .
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, :268-+
[20]   NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].
HENRY, CH ;
LANG, DV .
PHYSICAL REVIEW B, 1977, 15 (02) :989-1016