General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films

被引：220

作者：

Leenheer, Andrew J. ^{[2
]}

Perkins, John D. ^{[1
]}

van Hest, Maikel F. A. M. ^{[1
]}

Berry, Joseph J. ^{[1
]}

O'Hayre, Ryan P. ^{[2
]}

Ginley, David S. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Colorado Sch Mines, Dept Mat Sci, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.77.115215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the dependence of the electronic properties on the metal composition and oxygen content of transparent conducting amorphous indium zinc oxide (a-IZO) films deposited by dc magnetron sputtering. a-IZO shows a clear Burstein-Moss shift with an effective optical band gap of 3.1 eV independent of the metal composition. A metal-composition-independent dependence of the mobility (mu) on carrier concentration (N) is also found for a-IZO with mu(max) = 54 cm(2)/V s at N = 1.3 x 10(20) cm(-3). The electron transport, thermally activated at N <= 10(19) cm(-3), becomes limited by lattice scattering at N approximate to 1020 cm(-3) and then by ionized impurity scattering at N > 5 x 10(20) cm(-3).

引用

页数：5

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