Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal

被引：147

作者：

Li, ZW

Barry, ST

Gordon, RG ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

[2] Carleton Univ, Dept Chem, Ottawa, ON K1S 5B6, Canada

来源：

INORGANIC CHEMISTRY | 2005年 / 44卷 / 06期

关键词：

D O I：

10.1021/ic048492u

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A series of copper(I) amidinates of the general type [(R ' NC(R)NR '')Cu](2) (R ' and R '' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.

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页码：1728 / 1735

页数：8

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