GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

被引：50

作者：

Archer, Melissa J. ^{[1
]}

Law, Daniel C. ^{[2
]}

Mesropian, Shoghig ^{[2
]}

Haddad, Moran ^{[2
]}

Fetzer, Christopher M. ^{[2
]}

Ackerman, Arthur C. ^{[3
]}

Ladous, Corinne

King, Richard R. ^{[2
]}

Atwater, Harry A. ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

[2] Spectrolab Inc, Sylmar, CA 91342 USA

[3] Aonex Technol, Pasadena, CA 91106 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2887904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large area, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates. (c) 2008 American Institute of Physics.

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页数：3

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