Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

被引：7

作者：

Dong, JR ^{[1
]}

Chua, SJ ^{[1
]}

Wang, YJ ^{[1
]}

Yuan, HR ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 269卷 / 2-4期

关键词：

matalorganic chemical vapor deposition; AlGaInP; TBP;

D O I：

10.1016/j.jcrysgro.2004.05.053

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlGaInP epilayers of different Al compositions have been grown on (10 0) GaAs substrates with a misorientation of 2degrees and 7degrees towards (1 1 1)A by metalorganic chemical vapor deposition using tertiarybutylphosphine. High-resolution X-ray diffraction measurements show that the In composition of the AlGaInP epilayer grown on 7degrees off substrate is lower than that of the AlGaInP epilayer grown on 2degrees off substrate. Also the difference in the In composition increases with increasing V/III ratio while decreasing with increasing Al composition and substrate temperature. Based on the effect of substrate orientation and temperature on the sticking coefficients and migration lengths of the adatoms, the dependence of In composition on the substrate orientation and growth temperature are discussed. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：408 / 412

页数：5

共 7 条

[1] Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates [J].