Optimizing the electromigration performance of copper interconnects

被引：53

作者：

Besser, P ^{[1
]}

Marathe, A ^{[1
]}

Zhao, L ^{[1
]}

Herrick, M ^{[1
]}

Capasso, C ^{[1
]}

Kawasaki, H ^{[1
]}

机构：

[1] Adv Micro Devices Inc, Tech Dev Grp, Austin, TX USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of changes in linewidth, barrier type and anneal temperature on electromigration (EM) reliability of inlaid Cu interconnect lines were investigated. Methods developed for quantifying changes in grain size and orientation with changes in processing are detailed and applied to understand their impact on electromigration. While interfaces and microstructure both play a role in Cu reliability, interface diffusion is the dominant effect. For a constant interface and linewidth, grain size is shown to affect reliability.

引用

页码：119 / 122

页数：4

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