High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy -: art. no. 152101

被引：276

作者：

Xiu, FX

Yang, Z

Mandalapu, LJ

Zhao, DT

Liu, JL ^{[1
]}

Beyermann, WP

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Dept Phys, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 15期

关键词：

D O I：

10.1063/1.2089183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A degrees X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2 Omega cm, high hole concentration of 1.7x10(18) cm(-3) and high mobility of 20.0 cm(2)/V s. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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