Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications

被引：176

作者：

Breuer, Steffen ^{[1
]}

Pfueller, Carsten ^{[1
]}

Flissikowski, Timur ^{[1
]}

Brandt, Oliver ^{[1
]}

Grahn, Holger T. ^{[1
]}

Geelhaar, Lutz ^{[1
]}

Riechert, Henning ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

NANO LETTERS | 2011年 / 11卷 / 03期

关键词：

Nanowire; vapor-liquid-solid; heteroepitaxy; photoluminescence; minority carrier lifetime; deep recombination center; MOLECULAR-BEAM EPITAXY; MINORITY-CARRIER LIFETIME; PHOTOLUMINESCENCE; RECOMBINATION; TEMPERATURE; GROWTH; SPECTROSCOPY; GOLD;

D O I：

10.1021/nl104316t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The incorporation of Au during vapor-liquid-solid nanowire growth might inherently limit the performance of nanowire-based devices. Here, we assess the material quality of Au-assisted and Au-free grown GaAs/(Al,Ga)As core-shell nanowires using photoluminescence spectroscopy. We show that at room temperature, the internal quantum efficiency is systematically much lower for the Au-assisted nanowires than for the Au-free ones. In contrast, the optoelectronic material quality of the latter is comparable to that of state-of-the-art planar double heterostructures.

引用

页码：1276 / 1279

页数：4

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