A method of TSC analysis of shallow levels applied to silicon

被引：30

作者：

Borchi, E ^{[1
]}

Bruzzi, M ^{[1
]}

Pirollo, S ^{[1
]}

Sciortino, S ^{[1
]}

机构：

[1] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 24期

关键词：

D O I：

10.1088/0022-3727/31/24/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A distortion of the thermally stimulated currents (TSC) line-shape and peak position has been observed in the temperature range 8-20 K in n-type silicon. This behaviour has been explained through the Poote-Frenkel effect, considering both the change of the depletion depth due to the thermal release of carriers and the corresponding variation of the emission constant due to the change in the electric field. A numerical fit has been developed, the results of which are in good agreement with the experimental data. The method is quite general and can be applied to the shallow-level analysis of less popular semiconductor materials.

引用

页码：L93 / L96

页数：4

共 8 条

[1] THERMALLY STIMULATED CURRENT SPECTROSCOPY - EXPERIMENTAL-TECHNIQUES FOR THE INVESTIGATION OF SILICON DETECTORS [J].

BALDINI, A ;

BRUZZI, M .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (04) :932-936

[2]

BLOOD P, 1992, ELECT CHARACTERISATI, P435

[3] ANALYSIS OF NONEXPONENTIAL THERMALLY STIMULATED CURRENTS FOR HEAVILY-DOPED SILICON DIODES [J].

BORCHI, E ;

BRUZZI, M .

SOLID-STATE ELECTRONICS, 1995, 38 (04) :753-759

[4] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J].

BUEHLER, MG .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :69-+

[5] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J].

FORBES, L ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :182-&

[6]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[7] THEORY OF LOCALIZED STATES IN SEMICONDUCTORS .1. NEW RESULTS USING AN OLD METHOD [J].

PANTELIDES, ST ;

SAH, CT .

PHYSICAL REVIEW B, 1974, 10 (02) :621-637

[8] DETERMINATION OF BORON AND PHOSPHORUS CONCENTRATION IN SILICON BY PHOTO-LUMINESCENCE ANALYSIS [J].

TAJIMA, M .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :719-721

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