Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy

被引：62

作者：

Hua, Bin

Motohisa, Junichi

Ding, Ying

Hara, Shinjiroh

Fukui, Takashi

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Electron, Sapporo, Hokkaido 060, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 060, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2787895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present the formation of Fabry-Perot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Perot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAs nanowires were also observed. (C) 2007 American Institute of Physics.

引用

页数：3

共 16 条

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