Kinetic and quantum models for nanoelectronic and optoelectronic device simulation

被引：12

作者：

Fedoseyev, Alexander I. ^{[1
]}

Turowski, Marek ^{[1
]}

Wartak, Marek S. ^{[2
,3
]}

机构：

[1] CFD Res Corp, Huntsville, AL 35805 USA

[2] Wilfrid Laurier Univ, Dept Phys & Comp Sci, Waterloo, ON N2L 3C5, Canada

[3] Univ Waterloo, Dept Phys, Waterloo, ON N2L 3G1, Canada

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2007年 / 2卷 / 03期

关键词：

semiconductor device simulation; modeling; Boltzmann equation; Schroedinger equation; Green function; drift-diffusion; reduced models;

D O I：

10.1166/jno.2007.303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a review of physical and mathematical models as well as simulation tools for the analysis and design of nanoelectronic and optoelectronic semiconductor devices. The simulation approaches reviewed are drift-diffusion model with reduced quantum models, kinetic models based on Boltzmann transport equation with quantum corrections, Schroedinger equation based approach, non-equilibrium Green function method, and quantum hydrodynamics. We also review capabilities of an existing advanced device simulator, NanoTCAD, for modeling of nanoelectronic and optoelectronic device characteristics and we provide a comparison of results obtained with different models and simulation approaches.

引用

页码：234 / 256

页数：23

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