Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

被引：11

作者：

Gusev, O

Bresler, M

Kuznetsov, A

Kudoyarova, V

Pak, P

Terukov, E

Tsendin, K

Yassievich, I

Fuhs, W

Weiser, G

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Hahn Meitner Inst Kernforsch Berlin GmbH, Abt Photovoltaik, D-12489 Berlin, Germany

[3] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

基金：

俄罗斯基础研究基金会;

关键词：

erbium-ion electroluminescence; amorphous silicon; dangling-bond defects; defect-related Auger excitation; ionization;

D O I：

10.1016/S0022-3093(98)00283-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have observed room-temperature erbium-ion electroluminescence in erbium-doped amorphous silicon. Electrical conduction through the structure is controlled by thermally activated ionization of deep D(-) defects in an electric field and the reverse process of capture of mobile electrons by D(o) states. Defect-related Auger excitation (DRAE) is responsible for excitation of erbium ions located close to dangling-bond defects. Our experimental data are consistent with the mechanisms proposed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1164 / 1167

页数：4

共 6 条

[1] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON [J].