TEM characterization of InN films grown by RF-MBE

被引：19

作者：

Araki, T ^{[1
]}

Ueta, S ^{[1
]}

Mizuo, K ^{[1
]}

Yamaguchi, T ^{[1
]}

Saito, Y ^{[1
]}

Nanishi, Y ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Photon, Kusatsu 5258577, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303274

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Structural properties of InN films grown on (0001) sapphire by radio frequency molecular beam epitaxy were characterized using transmission electron microscopy. A high density of threading dislocations was observed in the InN films. The density of the dislocation was more than 2 x 10(10) cm(-2). Most threading dislocations were edge-type dislocations. A columnar structure of crystallites with a small angular distribution in the c-plane (twist) was clearly observed. X-ray rocking curve measurements showed that InN film had relatively large distribution of twist in contrast to that of tilt. Convergent beam electron diffraction method was used to determine the polarity of the InN film. It is found that the InN film grown on the sapphire (0001) substrate showed N-polarity. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2798 / 2801

页数：4

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