Unusual atomic arrangements in amorphous silicon

被引：17

作者：

Kugler, S ^{[1
]}

Kohary, K

Kádas, K

Pusztai, L

机构：

[1] Budapest Univ Technol & Econom, Dept Theoret Phys, H-1521 Budapest, Hungary

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[3] Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 127卷 / 04期

基金：

匈牙利科学研究基金会;

关键词：

disordered systems; semiconductors; defects; electronic band structure;

D O I：

10.1016/S0038-1098(03)00435-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The existence of small bond angles (like those of triangles and squares) in amorphous silicon networks were studied by the tight-binding molecular dynamics method, by analyzing the statistical data of Si-Si-Si fragments inside large molecules, and also by the Reverse Monte-Carlo simulation method. The influence of small bond angles on the electronic density of states was revealed. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：305 / 309

页数：5

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