Structural and compositional analysis of transition-metal-doped ZnO and GaNPLD thin films

被引：25

作者：

Dorneles, LS ^{[1
]}

O'Mahony, D ^{[1
]}

Fitzgerald, CB ^{[1
]}

McGee, F ^{[1
]}

Venkatesan, M ^{[1
]}

Stanca, I ^{[1
]}

Lunney, JG ^{[1
]}

Coey, JMD ^{[1
]}

机构：

[1] Trinity Coll Dublin, Dept Phys, Dublin 2, Ireland

来源：

APPLIED SURFACE SCIENCE | 2005年 / 248卷 / 1-4期

关键词：

pulsed laser deposition; ferromagnetic semiconductor; sputtering;

D O I：

10.1016/j.apsusc.2005.03.044

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the structural and magnetic properties of thin films of ZnO and GaN semiconductors doped with magnetic and non-magnetic transition-metals. The films were prepared on sapphire substrates by pulsed laser deposition from doped ceramic targets. Room temperature ferromagnetism was observed in ZnO (doped with Sc, Ti, V, Fe, Co or Ni) and in Mn-doped GaN films. In both cases, single crystal epitaxial growth was observed. The higher dopant:Zn ratio observed in the films is attributed to the preferential sputtering of Zn by energetic ions in the laser ablation plasma plume. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：406 / 410

页数：5

共 22 条

[1] Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry [J].