Second-harmonic generation at the interface between Si(100) and thin SiO2 layers

被引：9

作者：

Cundiff, ST

Knox, WH

Baumann, FH

Evans-Lutterodt, KW

Green, ML

机构：

[1] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA

[2] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.581292

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In materials that have bulk inversion symmetry, optical second harmonic generation (SHG) is sensitive to regions when the inversion symmetry is broken, i.e., a surface or interface. We measure SHG from the interface between Si(100) and thin layers of SiO(2). Measurements on a series vicinal samples (0 degrees-5 degrees off axis) show that one-and threefold symmetries in the SHG signal increase with increasing off-axis angle. Comparison to x-ray scattering measurements of the interface roughness, for a set of on-axis samples, demonstrates the sensitivity of SHG to interface roughness. (C) 1998 American Vacuum Society.

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页码：1730 / 1734

页数：5

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