Electronic and magnetic properties of 3d transition-metal-doped GaAs

被引：98

作者：

Shirai, M ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 10卷 / 1-3期

基金：

日本学术振兴会;

关键词：

electronic band-structure calculation; diluted magnetic semiconductors; ferromagnetic materials;

D O I：

10.1016/S1386-9477(01)00070-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electronic band-structure calculations are carried out for the hypothetical zinc-blende phase of 3d transition-metal monoarsenides as well as periodic supercells of 3d transition-metal-doped GaAs by using the full-potential linearized augmented-plane-wave method. The antiferromagnetic state is stable for zinc-blende FeAs, while the ferromagnetic state is stable for zinc-blende VAs, CrAs, and MnAs. It is expected that (Ga,Cr)As becomes ferromagnetic due to the presence of mobile valence-band carriers (holes), since the electronic band-structure in the ferromagnetic state of(Ga,Cr)As is very similar to that of(Ga,Mn)As. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：143 / 147

页数：5

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