Domain switching kinetics in disordered ferroelectric thin films

被引：270

作者：

Jo, J. Y. ^{[1
]}

Han, H. S. ^{[1
]}

Yoon, J. -G. ^{[2
]}

Song, T. K. ^{[3
]}

Kim, S. -H. ^{[4
]}

Noh, T. W. ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, ReCOE&FPRD, Seoul 151747, South Korea

[2] Univ Suwon, Dept Phys, Suwon 445743, Gyeonggi Do, South Korea

[3] Changwon Natl Univ, Sch Nano Adv Mat, Chang Won 641773, Gyeongnam, South Korea

[4] Inostek Inc, R&D Ctr, Ansan 426901, Gyeonggi Do, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.99.267602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated domain kinetics by measuring the polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr,Ti)O-3 films, which are widely used in ferroelectric memories. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of logarithmic domain-switching times. We suggested that the local field variation due to dipole defects at domain pinning sites could explain the Lorentzian distribution.

引用

页数：4

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