Imprint characteristics of SrBi2Ta2O9 thin films with modified Sr composition

被引：24

作者：

Hase, T ^{[1
]}

Noguchi, T ^{[1
]}

Takemura, K ^{[1
]}

Miyasaka, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期

关键词：

SBT; dynamic imprint; static imprint; charge shift; internal voltage; coercive voltage;

D O I：

10.1143/JJAP.37.5198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Imprint characteristics of SrBi2Ta2O9 (SBT) thin films with modified Sr composition were investigated under elevated temperatures. A significant shift in readout charge was observed after applying unipolar pulses (dynamic imprint test) at above 100 degrees C, while only a small shift was detected even when the capacitors were held at 150 degrees C for up to 10(4) s without any electrical signals (static imprint test). The charge shift was due to the internal voltage formed by applying the unipolar pulses. Its increase, that is, degradation of dynamic imprint endurance with increasing temperature is attributed to both an increase of the internal voltage and a decrease of the coercive voltage (V-c). There was no significant difference in the internal voltage between Sr deficient and Sr non-deficient SET. SET with a Sr deficient composition had a relatively high dynamic imprint endurance compared to the Sr non-deficient films because of higher remanent polarization and larger V-c.

引用

页码：5198 / 5202

页数：5

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