Photon-induced localization in optically absorbing materials

被引：16

作者：

Mantese, L

Bell, KA

Aspnes, DE

Rossow, U

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[2] Tech Univ Ilmenau, Inst Phys, D-98484 Ilmenau, Germany

来源：

PHYSICS LETTERS A | 1999年 / 253卷 / 1-2期

关键词：

localization; surface optical absorption;

D O I：

10.1016/S0375-9601(98)00953-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that components of surface- and interface-related optical spectra that are related to derivatives of their bulk dielectric functions are due to a dynamic photon-induced localization of the initial and final states. Localization is described by correlation effects that arise from the finite penetration depth of light in optically absorbing materials, and lead to a substantially different perspective of optical absorption than that given by conventional theory. (C) 1999 Elsevier Science B.V.

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收藏

页码：93 / 97

页数：5

相关论文

共 15 条

[1] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332

[2] Surface and interface effects on ellipsometric spectra of crystalline Si [J].

Bell, KA ;

Mantese, L ;

Rossow, U ;

Aspnes, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1205-1211

[3] RANDOMLY ORIENTED ANGSTROM-SCALE MICROROUGHNESS AT THE SI(100) SIO2 INTERFACE PROBED BY OPTICAL 2ND-HARMONIC GENERATION [J].

DADAP, JI ;

DORIS, B ;

DENG, Q ;

DOWNER, MC ;

LOWELL, JK ;

DIEBOLD, AC .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2139-2141

[4] IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY [J].

DAUM, W ;

KRAUSE, HJ ;

REICHEL, U ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1234-1237

[5] Optical anisotropy of the GaAs(001) surface [J].

Eryigit, R ;

Herman, IP .

PHYSICAL REVIEW B, 1997, 56 (15) :9263-9266

[6] MICROSCOPIC CALCULATION OF ELECTROMAGNETIC-FIELDS IN REFRACTION AT A JELLIUM-VACUUM INTERFACE [J].

FEIBELMAN, PJ .

PHYSICAL REVIEW B, 1975, 12 (04) :1319-1336

[7] INTRINSIC STRESS AND STRESS GRADIENTS AT THE SIO2/SI INTERFACE IN STRUCTURES PREPARED BY THERMAL-OXIDATION OF SI AND SUBJECTED TO RAPID THERMAL ANNEALING [J].

FITCH, JT ;

BJORKMAN, CH ;

LUCOVSKY, G ;

POLLAK, FH ;

YIN, X .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :775-781

[8] Local-field and exchange-correlation effects in optical spectra of semiconductors [J].

Gavrilenko, VI ;

Bechstedt, F .

PHYSICAL REVIEW B, 1996, 54 (19) :13416-13419

[9] Evidence of near-surface localization of excited electronic states in crystalline Si [J].

Mantese, L ;

Bell, KA ;

Rossow, U ;

Aspnes, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1196-1200

[10] Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces [J].

Mantese, L ;

Rossow, U ;

Aspnes, DE .

APPLIED SURFACE SCIENCE, 1996, 107 :35-41