Low frequency noise and screening effects in AlGaN/GaN HEMTs

被引：25

作者：

Garrido, JA

Calle, F

Muñoz, E

Izpura, I

Sánchez-Rojas, JL

Li, R

Wang, KL

机构：

[1] ETSI Telecomun, Dept Ingn Elect, E-28040 Madrid, Spain

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 24期

关键词：

D O I：

10.1049/el:19981597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low frequency noise has been studied in Al(0.15)G(0.85)N/GaN high electron mobility transistors grown on sapphire substrates by metal organic vapour phase epitaxy. A strong dependence between the Hooge parameter alpha(H) and V-GS was found. A Hooge parameter as low as 5 x 10(-4) was obtained at V-GS = 0V. Mobility fluctuations produced by changes in the rate of trapping charge at dislocations are suggested to be the dominant 1/f noise mechanism, although screening effects by the channel electrons significantly reduce their effect on the 1/f noise properties.

引用

页码：2357 / 2359

页数：3

共 9 条

[1]

GARRIDO JA, 1998, IN PRESS P INT C QUA

[2] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J].