Scattering of electrons at threading dislocations in GaN

被引：572

作者：

Weimann, NG

Eastman, LF

Doppalapudi, D

Ng, HM

Moustakas, TD

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

[2] Boston Univ, Ctr Photon Res, Boston, MA USA

[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 07期

关键词：

D O I：

10.1063/1.366585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines. (C) 1998 American Institute of Physics. [S0021-8979(98)02207-5].

引用

页码：3656 / 3659

页数：4

共 15 条

[1] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].