Design and fabrication process of optically pumped GaInAsP/InP stripe laser with resonant pumping for high-power operation

被引：5

作者：

Onishi, Y ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Microsyst Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 08期

关键词：

high power lasers; optical amplifiers; optically pumped lasers; resonant cavity; pumping efficiency; wafer bonding;

D O I：

10.1143/JJAP.40.4920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-power GaInAsP/InP semiconductor laser optically pumped by a 0.98 mum high-power broad area laser has been proposed. A vertical resonant pumping scheme is introduced to increase the absorption efficiency of the pump light. It is shown that the fraction of absorbed pump light can be increased up to 99% by inserting a highly reflective mirror with a reflectivity of 99%. in addition, a vertical resonant cavity using a GaAs/AlAs distributed Bragg reflector (DBR) was formed by a low-temperature water bonding technique.

引用

页码：4920 / 4921

页数：2

共 8 条

[1] PROPERTIES OF FIBER RAMAN AMPLIFIERS AND THEIR APPLICABILITY TO DIGITAL OPTICAL COMMUNICATION-SYSTEMS [J].