DIELECTRICALLY-BONDED LONG-WAVELENGTH VERTICAL-CAVITY LASER ON GAAS SUBSTRATES USING STRAIN-COMPENSATED MULTIPLE-QUANTUM WELLS

被引：10

作者：

CHUA, CL ^{[1
]}

LIN, CH ^{[1
]}

ZHU, ZH ^{[1
]}

LO, YH ^{[1
]}

HONG, M ^{[1
]}

MANNAERTS, JP ^{[1
]}

BHAT, R ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.392231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel low temperature bonding technique for fabricating long wavelength vertical cavity surface emitting lasers (VCSEL's). The technique relies on a 750 Angstrom-thick intermediate spin-on glass layer to join a highly efficient InP-based InGaAs-InGaAsP strain-compensated multiple quantum well (SC-MQW) gain medium on a GaAs substrate, We fabricated the device on GaAs in order to take advantage of highly reflective AlAs-GaAs Bragg reflectors, The optically-pumped device has a low threshold pump power of 4.2 kW/cm(2) at room temperature and operates at a wavelength of 1.44 mu m.

引用

收藏

页码：1400 / 1402

页数：3

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