Effect of ultraviolet-ozone treatment of indium-tin-oxide on electrical properties of organic light emitting diodes

被引:130
作者
Kim, SY
Lee, JL [1 ]
Kim, KB
Tak, YH
机构
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea
[2] LG Elect Inc, Kumi 730030, Kyungbuk, South Korea
关键词
D O I
10.1063/1.1635995
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the change of surface electronic structure of indium-tin-oxide (ITO) as a function of ultraviolet (UV)-ozone treatment time. The voltage of organic light emitting diodes at a current density of 100 mA/cm(2) was reduced as the surface treatment time using UV-ozone was lengthened. X-ray photoelectron spectroscopy results showed that the relative concentration of carbon atoms decreased, but oxygen concentration increased relatively with UV-ozone treatment. This led to the increase in the ITO work function via the reduction of operation voltage. (C) 2004 American Institute of Physics.
引用
收藏
页码:2560 / 2563
页数:4
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