GaN films deposited by middle-frequency magnetron sputtering

被引：16

作者：

Zou, C. W. ^{[1
]}

Yin, M. L.

Li, M.

Guo, L. P.

Fu, D. J.

机构：

[1] Wuhan Univ, Dept Phys, Accelerator Lab, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Minist Educ, Key Lab Acoust & Photon Mat & Devices, Wuhan 430072, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 23期

基金：

中国国家自然科学基金;

关键词：

GaN; middle-frequency; magnetron sputtering; structure;

D O I：

10.1016/j.apsusc.2007.05.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaN films were deposited on Si (I 11) substrates by middle-frequency magnetron sputtering. X-ray diffraction revealed preferential GaN (0 0 0 2) orientation normal to the substrate surface for all the films deposited. The diffraction intensity and N contents were found to depend strongly on the total gas pressure. Good quality films were only obtained at pressures in the range of 0.4-1.0 Pa. Little diffraction of GaN (0 0 0 2) could be observed either at total pressures below 0.4 Pa or above 1.0 Pa. The GaN films produced under the optimized conditions have an N:Ga ratio of 1: 1 as determined by energy-dispersive X-ray spectroscopy. (c) 2007 Published by Elsevier B.V.

引用

页码：9077 / 9080

页数：4

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