Mechanism for coherent island formation during heteroepitaxy

被引：66

作者：

Ratsch, C

Smilauer, P

Vvedensky, DD

Zangwill, A

机构：

[1] FORSCHUNGSZENTRUM JULICH, HLRZ, D-52425 JULICH, GERMANY

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL, INTERDISCIPLINARY RES CTR SEMICOND MAT, LONDON SW7 2BZ, ENGLAND

[3] UNIV LONDON IMPERIAL COLL SCI & TECHNOL, BLACKETT LAB, LONDON SW7 2BZ, ENGLAND

[4] GEORGIA INST TECHNOL, SCH PHYS, ATLANTA, GA 30332 USA

来源：

JOURNAL DE PHYSIQUE I | 1996年 / 6卷 / 04期

关键词：

D O I：

10.1051/jp1:1996230

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Monte Carlo simulations are reported for an atomistic model of heteroepitaxial growth. Dislocations are excluded but lattice misfit is assumed to encourage atom detachment from islands by reducing the barrier for this process by a morphology-dependent strain energy. Three-dimensional, coherent islands of nearly uniform size are found to form spontaneously for misfit above a critical value.

引用

页码：575 / 581

页数：7

共 29 条

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