Design and properties of phototransistor photodetector in standard 0.35-μm SiGeBiCMOS technology

被引：10

作者：

Lai, Kuang-Sheng ^{[1
]}

Huang, Ji-Chen ^{[1
]}

Hsu, Klaus Ya. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Inst Elect Engn, Hsinchu 30013, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 03期

关键词：

photodetector; phototransistor; responsivity; SiGe;

D O I：

10.1109/TED.2007.915385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, without altering any step of the commercial 0.35-mu m SiGe BiCMOS process, a novel photodetector named phototransistor photodetector (PTPD) has been realized and demonstrated. The PTPD shows high photoresponsivity and its structure relaxes the tradeoff between sensitivity and speed. Responsivities of 9.5 A/W for 670 nm light and of 5.2 A/W for 850 nm light were achieved. The operation details of the PTPD are introduced in this paper. The device can be readily integrated with other on-chip circuits to form a high-performance optoelectronic IC. The low cost, the high performance, and the flexibility in optical-electrical design allow the SiGe PTPD to be used in many demanding applications.

引用

页码：774 / 781

页数：8

共 27 条

[1]

CRISTEA D, 1996, P 19 INT SEM C CAS 9, V1, P215

[2]

*FAC EL ENG, 2003, SIL PHOT CHIP PTN101

[3] A silicon-based integrated NMOS-p-i-n photoreceiver [J].

Garrett, LD ;

Qi, J ;

Schow, CL ;

Campbell, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (03) :411-416

[4] A high-speed 850-nm optical receiver front-end in 0.18-μm CMOS [J].

Hermans, Carolien ;

Steyaert, Michiel S. J. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (07) :1606-1614

[5] OPTICAL-SPECTRA OF SIXGE1-X ALLOYS [J].

HUMLICEK, J ;

GARRIGA, M ;

ALONSO, MI ;

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) :2827-2832

[6] 2-Gb/s CMOS optical integrated receiver with a spatially a modulated photodetector [J].

Jutzi, M ;

Grözing, M ;

Gaugler, E ;

Mazioschek, W ;

Berroth, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (06) :1268-1270

[7] DEVELOPMENT OF AN INTEGRATED HIGH-SPEED SILICON PIN PHOTODIODE SENSOR [J].

KYOMASU, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (06) :1093-1099

[8]

Lai KS, 2007, IEEE ELECTR DEVICE L, V28, P800, DOI [10.1109/LED.2007.904337, 10.1109/LED.2007.903932]

[9] Potencials of radio over multimode fiber systems for the in-buildings coverage of mobile and wireless LAN applications [J].

Lethien, C ;

Loyez, C ;

Vilcot, JP .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (12) :2793-2795

[10] OPTICAL-PROPERTIES OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYERS [J].

LUBBERTS, G ;

BURKEY, BC ;

MOSER, F ;

TRABKA, EA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6870-6878

← 1 2 3 →