Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs

被引：44

作者：

Bedell, Stephen W. ^{[1
]}

Majumdar, Amlan ^{[1
]}

Ott, John A. ^{[1
]}

Arnold, John ^{[2
]}

Fogel, Keith ^{[1
]}

Koester, Steven J. ^{[1
]}

Sadana, Devendra K. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Res, Albany NanoTech, Albany, NY 12203 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期

关键词：

germanium; MOSFET; silicon-germanium-on-insulator (SGOI); strain;

D O I：

10.1109/LED.2008.2000713

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 min. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.

引用

页码：811 / 813

页数：3

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