Minority carrier transport in GaN and related materials

被引：88

作者：

Chernyak, L ^{[1
]}

Osinsky, A

Schulte, A

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Corning Appl Technol, Woburn, MA 01801 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(01)00161-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Minority carrier transport properties are an indicator of AlGaN quality. This characteristic is particularly of significant importance for AlGaN-based bipolar devices. The goal of this review is to discuss different factors - temperature, doping level, dislocation density, electron current density - which affect minority carrier mobility, lifetime, and diffusion length, and to relate the changes in AlGaN transport properties to the functionality of electronic and optoelectronic devices. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1687 / 1702

页数：16

共 55 条

[51] The role of threading dislocations in the physical properties of GaN and its alloys [J].