Electron-paramagnetic-resonance study of the (100)Si/Si3N4 interface

被引：22

作者：

Aubert, P

von Bardeleben, HJ

Delmotte, F

Cantin, JL

Hugon, MC

机构：

[1] Inst Opt, Lab Charles Fabry, F-91403 Orsay, France

[2] Univ Paris 06, Phys Solides Grp, F-75251 Paris 05, France

[3] Univ Paris 07, Phys Solides Grp, F-75251 Paris 05, France

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.59.10677

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The (100)Si/Si3N (4) interface, formed by the deposition of Si3N4 layers on bulk (100) Si by distributed electron-cyclotron-resonance plasma-enhanced chemical vapor deposition, has been studied by electron-paramagnetic-resonance spectroscopy. Only one interface defect, the P-b0 center, characterized by trigonal point symmetry and principal values of the g tensor, g(parallel to) = 2.0018+/-0.0002 and g(perpendicular to) =2.0089+/-0.0002, has been detected. Its area concentration is of the order of (2-5) X 10(11) cm(-2). The characteristic defect of the (100)Si/SiO2 interface, the Pbl center, is not observed. The Si3N4 layers contain one main native bulk defect, the K center, at concentrations of 5 X 10(17) cm(-3). [S0163-1829(99)11315-8].

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页码：10677 / 10684

页数：8

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